发明名称 CIRCUIT SUBSTRATE WITH BUILT-IN CAPACITOR AND SEMICONDUCTOR DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a circuit substrate with a built-in capacitor, where a high dielectric layer consisting of perovskite structural oxide or the like is used and an Fe-base conductive member is used as a base substrate, at a low cost. SOLUTION: A first conductive layer formed of a high melting point metal such as Cr, a second conductor layer with a layer formed of conductive oxide or noble metal, a dielectric layer and a third electrode layer are laminated one by one on a base substrate consisting of an Fe-base conductive member, and a capacitor is formed. After a capacitor is formed, a base substrate is processed and a via electrically connecting front and rear surfaces is formed, thus obtaining a circuit substrate which is proper for an interposer. A capacitor is used as a decoupling capacitor by connecting a first electrode formed of a base substrate to a ground terminal and a counter electrode to a power supply terminal.
申请公布号 JP2001250885(A) 申请公布日期 2001.09.14
申请号 JP20000063282 申请日期 2000.03.03
申请人 HITACHI LTD 发明人 MATSUZAKI EIJI;SHIGI HIDETAKA;ABE YOICHI;MATSUSHIMA NAOKI;HASEBE TAKEHIKO
分类号 H05K1/09;H01G4/12;H01G4/33;H01L23/12;H05K1/05;H05K1/16;(IPC1-7):H01L23/12 主分类号 H05K1/09
代理机构 代理人
主权项
地址