| 摘要 |
Certain embodiments relate to a microwave monolithic integrated circuit using a silicon substrate in which parasitic capacitances between inductors and a silicon substrate are sufficiently reduced. A semiconductor device may include a silicon substrate 1, a CMOSFET 200 formed on the silicon substrate 1, and an inductor 100 formed over the silicon substrate 1 through an insulation layer 50. A through hole 300 is formed in the silicon substrate 1 in a portion below the inductor 100.
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