发明名称 Apparatus for electrochemical etching of pores of all types in semiconductors comprises internal longitudinal scales of whole system located in a suitable size
摘要 An apparatus for the electrochemical etching of pores of all types in semiconductors comprises internal longitudinal scales of the whole system located in a suitable size. The balance between the directly dispersed and the oxidizing part of the current and the nucleation of the pores are optimized. The system is synchronized and stabilized using a suitably selected control signal in the frequency region of the internal system frequencies. In-situ measurements of the transfer resistance are used for continuous fine control. Preferred Features: The change of the oxide dispersion kinetics is carried out by changing the HF concentration, by changing the viscosity of the electrolytes and by adjusting the pH value or the temperature.
申请公布号 DE10011253(A1) 申请公布日期 2001.09.13
申请号 DE20001011253 申请日期 2000.03.08
申请人 CARSTENSEN, JUERGEN;FOELL, HELMUT;CHRISTOPHERSEN, MARC;HASSE, GUNTHER 发明人 CARSTENSEN, JUERGEN;FOELL, HELMUT;CHRISTOPHERSEN, MARC;HASSE, GUNTHER
分类号 H01L21/3063;(IPC1-7):H01L21/306;B81C1/00;H01L31/18 主分类号 H01L21/3063
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