| 摘要 |
An interconnect structure is provided by applying a conductive layer (typically one or more metal layers 23,28) over the entire surface of the module (11) to form all of the contacts (19,32) to all of the cells in the module and then scribing the conductive layer into a series of strips using a series of straight high speed laser scribes. The strips are then divided into individual links by scribing transversely to the first scribe direction with the laser turned on and off to cut each alternate stripe. The p-type regions of the cells are contacted through holes (19), n-type regions are contacted through holes (32). A silicon film (12) is separated into cells (35a,b,c,d) by isolation grooves (16). In a first embodiment, every second transverse scribe is offset by one strip such that each strip is cut into links which overlap two links on either side that are offset by a distance equal to half the pitch of the links. The pitch of the links is equal to two cell widths and the transverse scribes are coincident with or close to interruptions in the underlying cell layout representing cell boundaries between adjacent cells of the module. In a second embodiment, conductive bridges extend across longitudinal interruptions separating the parallel extending strips. In this embodiment, the like type contact pads for the cells are aligned in rows extending transverse to the cell boundary with alternating rows of p type and n type contact pads. |
