| 摘要 |
A word line driver having a divided bias line in a non-volatile memory (NVM) device and method includes a row decoder for decoding a row address outputting a word line select signal to select a word line in response to the decoded result, and a bias supply unit for generating a first voltage includes a plurality of level shift circuits for shifting the first voltage in response to an externally applied program/erase signal during a first mode of operation and for outputting the shifted first voltage to the word line selected by the word line select signal, and a plurality of switching devices, which are switched in response to the program/erase signal, for transferring the word line select signal having a second voltage during a second mode of operation to the word line. This reduces the layout size of the NVM device by varying a voltage bias path and can improve an access speed during a data read mode of operation by minimizing word line delay.
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