发明名称 SEMICONDUCTOR MEMORY
摘要 A semiconductor memory the cycle time of which is shortened by accelerating the address access. A first address decoder (2) and a first refresh address decoder (5) decode an external address (Xn) fed from outside of the semiconductor memory and a refresh address (RXn) used for refresh in the semiconductor memory, respectively. A multiplexer (8) selects either a decode signal (XnDm) on the external address side or a decode signal (XnRm) on the refresh address side according to an external address transmission signal (EXTR) and a refresh address transmission signal (RFTR) so that a refresh and a Read/Write may be continuously performed in one memory cycle, and outputs the selected one as a decode signal (XnMm). A word driver (10) decodes the decode signals (XnMm, XpMq) selected by the multiplexer (8) and so forth so as to activate a word line (WLmq).
申请公布号 WO0167461(A1) 申请公布日期 2001.09.13
申请号 WO2001JP01768 申请日期 2001.03.07
申请人 NEC CORPORATION;TAKAHASHI, HIROYUKI;INABA, HIDEO;SONODA, MASATOSHI;KATO, YOSHIYUKI;NAKAGAWA, ATSUSHI 发明人 TAKAHASHI, HIROYUKI;INABA, HIDEO;SONODA, MASATOSHI;KATO, YOSHIYUKI;NAKAGAWA, ATSUSHI
分类号 G11C11/403;G11C11/401;G11C11/406;G11C11/407;G11C11/408;G11C29/04;(IPC1-7):G11C11/40 主分类号 G11C11/403
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