发明名称 |
NITRIDATION FOR SPLIT GATE MULTIPLE VOLTAGE DEVICES |
摘要 |
A method is disclosed for making gate oxides on a silicon wafer surface for multiple voltage applications comprising the steps of growing an oxide layer (12) on a wafer (10) surface, exposing the surface of the oxide layer (12) to a nitrogen ion containing plasma to form a nitrided layer (22). Next, a photoresist layer (14) is deposited over a portion of the oxide layer (12) and the isolation (30), followed by etching of the exposed nitrided layer 22 and a portion of the oxide layer (12) to create a thinner silicon dioxide layer (32). The photoresist layer (14) is removed, the wafer (10) is cleaned and then the thinner silicon dioxide layer (32) is removed prior to a final oxidation step to form a thinner silicon dioxide layer (34) having a different thickness than the silicon dioxide layer (12).
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申请公布号 |
US2001021588(A1) |
申请公布日期 |
2001.09.13 |
申请号 |
US19980215909 |
申请日期 |
1998.12.18 |
申请人 |
MISIUM GEORGE R.;HATTANGADY SUNIL V. |
发明人 |
MISIUM GEORGE R.;HATTANGADY SUNIL V. |
分类号 |
H01L21/314;H01L21/316;H01L21/762;H01L21/8234;(IPC1-7):H01L21/823;H01L21/31;H01L21/469;H01L21/320;H01L21/476 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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