发明名称 |
ACTIVE PIXEL SENSOR WITH FULLY-DEPLETED BURIED PHOTORECEPTOR |
摘要 |
A fully depleted photodiode (200) accumulates charge into both the photodiode (200) and a separate floating diffusion (205). The photodiode (200) is a buried photodiode having two PN junctions for photocarrier conversion. The floating diffusion (205) has less capacitance than the overall photodiode, thereby resulting in a knee-shaped transfer characteristic for charge accumulation that results in a larger dynamic range. The floating diffusion (205) is connected to an output transistor (210). A reset transistor has a gate (206) that is activated to connect the floating diffusion (205) to a diffusion region (208) that is held at VDD to reset the photodiode (200).
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申请公布号 |
WO0052765(A8) |
申请公布日期 |
2001.09.13 |
申请号 |
WO2000US05545 |
申请日期 |
2000.03.01 |
申请人 |
PHOTOBIT CORPORATION;FOSSUM, ERIC;BEREZIN, VLADIMIR |
发明人 |
FOSSUM, ERIC;BEREZIN, VLADIMIR |
分类号 |
H01L27/146;(IPC1-7):H01L31/06;H01L31/10 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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