| 发明名称 |
Method of manufacturing semiconductor device |
| 摘要 |
A second resist film is formed on a first resist film and then patterned. Thereafter, an SOG film is formed on the entire surface of the resultant structure to cover the second resist film. Subsequently, the SOG film and the second resist film and the first resist film are removed to pattern the SOG film and the first resist film. After that, using the patterned the first resist film as a mask, a trench is formed.
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| 申请公布号 |
US2001021586(A1) |
申请公布日期 |
2001.09.13 |
| 申请号 |
US20000742116 |
申请日期 |
2000.12.22 |
| 申请人 |
SHINOMIYA HIDEO;SETA SHOJI |
发明人 |
SHINOMIYA HIDEO;SETA SHOJI |
| 分类号 |
G03F7/40;H01L21/027;H01L21/302;H01L21/3065;H01L21/311;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
G03F7/40 |
| 代理机构 |
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代理人 |
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| 主权项 |
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