发明名称 |
METHODS OF ENHANCING DATA RETENTION OF A FLOATING GATE TRANSISTOR, METHODS OF FORMING FLOATING GATE TRANSISTORS, AND FLOATING GATE TRANSISTORS |
摘要 |
Floating gate transistors and methods of forming the same are described. In one implementation, a floating gate is formed over a substrate. The floating gate has an inner first portion and an outer second portion. Conductivity enhancing impurity is provided in the inner first portion to a greater concentration than conductivity enhancing impurity in the outer second portion. In another implementation, the floating gate is formed from a first layer of conductively doped semiconductive material and a second layer of substantially undoped semiconductive material. In another implementation, the floating gate is formed from a first material having a first average grain size and a second material having a second average grain size which is larger than the first average grain size.
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申请公布号 |
US2001021549(A1) |
申请公布日期 |
2001.09.13 |
申请号 |
US19980118359 |
申请日期 |
1998.07.17 |
申请人 |
KELLER J. DENNIS;LEE ROGER R. |
发明人 |
KELLER J. DENNIS;LEE ROGER R. |
分类号 |
H01L21/8247;H01L27/115;H01L29/49;(IPC1-7):H01L21/336;H01L21/823;H01L21/28;H01L21/44;H01L21/320;H01L21/476 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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