发明名称 Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof
摘要 A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned magnetic biasing layers formed of a single magnetic biasing material. The two pair of patterned magnetic biasing layers bias a pair of patterned magneto resistive (MR) layers in a pair of opposite canted directions. The method employs multiple thermal annealing methods one of which employs a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field such that a first pair of transversely magnetically biased patterned magnetic biasing layers is not substantially demagnetized when forming a second pair of transversely magnetically biased patterned magnetic biasing layers of anti-parallel transverse magnetic bias direction to the first pair of transversely magnetically biased patterned magnetic biasing layers.
申请公布号 US2001021087(A1) 申请公布日期 2001.09.13
申请号 US20010818963 申请日期 2001.03.28
申请人 HEADWAY TECHNOLOGIES, INC. 发明人 GUO YIMIN;JU KOCHAN;WANG PO-KANG;HAN CHERNG-CHYI;WANG HUI-CHUAN
分类号 G11B5/39;H04R15/00;(IPC1-7):G11B5/127;G11B5/33 主分类号 G11B5/39
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