发明名称 |
ACTIVE PIXEL CIRCUIT OF CMOS IMAGE SENSOR |
摘要 |
PURPOSE: An active pixel circuit of a CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to improve the quality of image by having the same characteristic and output as a CCD(charge coupled device). CONSTITUTION: A photodiode region generates a signal charge by irradiating light. The first transfer transistor(48) switches a transfer signal of the signal charge by a column selective signal. The second transfer transistor(49) turns on by the switched transfer signal, and transfers the signal charge to the first floating node(46). A source follower driver transistor(45) changes the potential of the second floating node(47) by the signal charge charged in the first floating node(46). A line select transistor(50) reads out the potential level of the second floating node(47) by a line select signal. A reset transistor(43) resets the charge charged in the first floating node(46).
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申请公布号 |
KR20010086511(A) |
申请公布日期 |
2001.09.13 |
申请号 |
KR20000010435 |
申请日期 |
2000.03.02 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, HANG GYU;LEE, SEO GYU;SHIN, JEONG SUN |
分类号 |
H01L27/146;H01L27/14;H04N1/028;H04N5/335;H04N5/369;H04N5/374;H04N5/3745;(IPC1-7):H01L27/14 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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