发明名称 ACTIVE PIXEL CIRCUIT OF CMOS IMAGE SENSOR
摘要 PURPOSE: An active pixel circuit of a CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to improve the quality of image by having the same characteristic and output as a CCD(charge coupled device). CONSTITUTION: A photodiode region generates a signal charge by irradiating light. The first transfer transistor(48) switches a transfer signal of the signal charge by a column selective signal. The second transfer transistor(49) turns on by the switched transfer signal, and transfers the signal charge to the first floating node(46). A source follower driver transistor(45) changes the potential of the second floating node(47) by the signal charge charged in the first floating node(46). A line select transistor(50) reads out the potential level of the second floating node(47) by a line select signal. A reset transistor(43) resets the charge charged in the first floating node(46).
申请公布号 KR20010086511(A) 申请公布日期 2001.09.13
申请号 KR20000010435 申请日期 2000.03.02
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, HANG GYU;LEE, SEO GYU;SHIN, JEONG SUN
分类号 H01L27/146;H01L27/14;H04N1/028;H04N5/335;H04N5/369;H04N5/374;H04N5/3745;(IPC1-7):H01L27/14 主分类号 H01L27/146
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