发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
In a crystallization process of an amorphous semiconductor film, a first crystalline semiconductor film having crystalline regions, and dotted with amorphous regions within the crystalline regions, is obtained by performing heat treatment processing after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. The amorphous regions are kept within a predetermined range by regulating the heat treatment conditions at this point. Laser annealing is performed on the first crystalline semiconductor film, to form a second crystalline semiconductor film. Electrical characteristics for a TFT manufactured based on the second crystalline semiconductor film can be obtained having less dispersion.
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申请公布号 |
US2001021544(A1) |
申请公布日期 |
2001.09.13 |
申请号 |
US20010799373 |
申请日期 |
2001.03.05 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHNUMA HIDETO;KOKUBO CHIHO;TANAKA KOICHIRO;MAKITA NAOKI;TSUCHIMOTO SHUHEI |
分类号 |
H01L21/20;H01L21/77;H01L21/84;H01L27/12;H01L29/04;(IPC1-7):H01L29/76;H01L31/062;H01L23/62;H01L21/00;H01L29/74;H01L31/111;H01L29/94;H01L31/113;H01L31/119 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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