发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A conductive film for gate electrode including a polysilicon film is deposited on a semiconductor substrate, and patterned to form gate electrodes. An oxide film is formed on each side face of at least the polysilicon film, and by nitriding at least the surface portion of the oxide film, a nitride oxide film is formed on each side face of the gate electrodes. An interlayer insulating film is then deposited, and contact holes are formed through the interlayer insulating film. The existence of the nitride oxide film suppresses variation and reduction in size due to oxidation and etching of the gate side faces during resist removal and washing.
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申请公布号 |
US2001020707(A1) |
申请公布日期 |
2001.09.13 |
申请号 |
US20010759300 |
申请日期 |
2001.01.16 |
申请人 |
SEGAWA MIZUKI;UEHARA TAKASHI |
发明人 |
SEGAWA MIZUKI;UEHARA TAKASHI |
分类号 |
H01L21/302;H01L21/28;H01L21/3065;H01L21/336;H01L21/8234;H01L27/088;H01L29/78;(IPC1-7):H01L21/336;H01L21/823;H01L31/119;H01L29/76;H01L29/94;H01L31/113;H01L21/476 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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