| 摘要 |
A positive photoresist composition comprises (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, (B) a resin which is insoluble or sparingly soluble in alkali but becomes soluble in alkali by the action of an acid, and (C) a nitrogen-containing compound containing at least one partial structure represented by formula (I) shown below in its molecule: The positive photoresist composition of the present invention is suitable for exposure to a far ultraviolet ray, particularly a KrF excimer laser beam, improved in line edge roughness and also excellent in sensitivity, resolution, depth of focus and resist profile.
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