发明名称 METHOD FOR OPENING KEY PATTERNS ON SEMICONDUCTOR
摘要 <p>The present invention relates to methods for opening key pattern, and more particularly, to opening methods that can etch an opaque part formed on key pattern by injecting wet etchant using narrow and hollow tube with nanometer or micrometer diameter. The present invention reduces the number of processing steps for opening key patterns.</p>
申请公布号 WO2001067496(A1) 申请公布日期 2001.09.13
申请号 KR2001000287 申请日期 2001.02.26
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