Semiconductor device e.g. IGBT

摘要

The semiconductor device includes a substrate (5,6,10) with an (n-) type front region and a back region (5) forming a first main connection. An n type well (40') is formed in a first region (10). A p type well (70) is formed in the first region. The second well forms a p type channel region (K) in a portion of the first well. A (n+) type third well is formed in the first region. The third well forms a second main connection in a common portion of the first and second well. A third main connection is provided over the channel region (K).