METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to prevent a selective loss and the bridge appearance between storage nodes by forming an HSG(Hemi-Sphere Grain) selectively on the storage nodes or a sidewall of the nodes. CONSTITUTION: An etching preventive film(160) is deposited on a semiconductor substrate(100). A sacrificial insulating film is formed on the etching preventive film(160). The etching preventive film(160) and the sacrificial insulating film are patterned to expose a predetermined portion of the semiconductor substrate(100), so that a storage node hole is formed. A cylinder type of storage node hole(240a) is formed to cover the sidewall and the bottom of the storage node hole. The patterned sacrificial insulating film is removed to expose the outside wall of the cylinder type of storage node hole(240a). An HSG silicon layer is formed on the surface of the cylinder type of storage node hole(240a). After the depositing of the etching preventive film(160) or the removing of the patterned sacrificial insulating film, impurities are ion-injected on the etching preventive film(160).