发明名称 |
Interconnect structure of semiconductor device and method for manufacturing same |
摘要 |
An interconnect structure of a semiconductor device includes: a bottom interconnect layer formed in a dielectric layer overlying a silicon substrate; a top interconnect layer having aluminum as a main component and connected with the bottom interconnect layer by way of a via plug formed in the dielectric layer; and a first barrier metal layer having higher <111> orientation. The higher <111> orientation degree of the first barrier metal layer aluminum suppresses occurrence and growth of electro-migration provide a reliable interconnect structure.
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申请公布号 |
US2001021578(A1) |
申请公布日期 |
2001.09.13 |
申请号 |
US20010836171 |
申请日期 |
2001.04.18 |
申请人 |
NEC CORPORATION |
发明人 |
YASUDA MAKOTO |
分类号 |
H01L23/52;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/528;H01L31/039;H01L23/049 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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