发明名称 |
Simultaneous formation of poly-poly capacitor, MOS transistor and bipolar transistor on substrate used in production of integrated circuits comprises using polycrystalline silicon to form electrodes |
摘要 |
The simultaneous formation of a poly-poly capacitor, a MOS transistor and a bipolar transistor on a substrate (10) comprises applying and structuring a first layer made from polycrystalline silicon on the substrate to form a first plate electrode of the capacitor and an electrode of the MOS transistor; and applying and structuring a second layer made from a polycrystalline silicon on the substrate to form a second plate electrode of the capacitor and an electrode of the bipolar transistor. The second polycrystalline layer is made from SiGe-polycrystalline silicon. An Independent claim is also included for the production of a poly-poly capacitor. Preferred Features: The electrode of the MOS transistor comprises a polycrystalline gate (20) formed on a gate oxide (22). The gate oxide is formed on the surface of the substrate and the substrate has source and drain regions (14) below the polycrystalline gate.
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申请公布号 |
DE10107012(A1) |
申请公布日期 |
2001.09.13 |
申请号 |
DE2001107012 |
申请日期 |
2001.02.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP., ARMONK |
发明人 |
COOLBAUGH, DOUGLAS DUANE;FREEMANN, GREGORY GOWER;SUBANNA, SESHADRI |
分类号 |
H01L21/331;H01L21/02;H01L21/822;H01L21/8234;H01L21/8249;H01L27/04;H01L27/06;H01L29/73;H01L29/737;(IPC1-7):H01L21/822;H01L27/08 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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