发明名称 |
Plasma film forming method and plasma film forming apparatus |
摘要 |
Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.
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申请公布号 |
US2001020608(A1) |
申请公布日期 |
2001.09.13 |
申请号 |
US20010750683 |
申请日期 |
2001.01.02 |
申请人 |
AKAHORI TAKASHI;TOZAWA MASAKI;NAITO YOKO;NAKASE RISA;YOKOYAMA OSAMU;ISHIZUKA SHUICHI;ENDO SHUNICHI;SAITO MASAHIDE;AOKI TAKESHI;HIRATA TADASHI |
发明人 |
AKAHORI TAKASHI;TOZAWA MASAKI;NAITO YOKO;NAKASE RISA;YOKOYAMA OSAMU;ISHIZUKA SHUICHI;ENDO SHUNICHI;SAITO MASAHIDE;AOKI TAKESHI;HIRATA TADASHI |
分类号 |
H01L21/31;C23C16/26;H01L21/312;H01L21/314;H01L21/768;(IPC1-7):B23K10/00 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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