发明名称 |
Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process |
摘要 |
A processing method for semiconductor devices in a semiconductor fabrication line includes processing a substrate in a first processing apparatus, transferring the substrate processed in the first processing apparatus to a detecting apparatus without removal of the substrate from the semiconductor fabrication line while continuing fabrication of the semiconductor devices, detecting foreign particle defects on the substrate transferred to the detecting apparatus, and determining a foreign particle generation condition of the processing apparatus based on a data from the detecting.
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申请公布号 |
US2001021015(A1) |
申请公布日期 |
2001.09.13 |
申请号 |
US20010805188 |
申请日期 |
2001.03.14 |
申请人 |
MORIOKA HIROSHI;NOGUCHI MINORI;OHSHIMA YOSHIMASA;KEMBO YUKIO;NISHIYAMA HIDETOSHI;MATSUOKA KAZUHIKO;SHIGYO YOSHIHARU |
发明人 |
MORIOKA HIROSHI;NOGUCHI MINORI;OHSHIMA YOSHIMASA;KEMBO YUKIO;NISHIYAMA HIDETOSHI;MATSUOKA KAZUHIKO;SHIGYO YOSHIHARU |
分类号 |
G01N21/00;G01N21/94;G01N21/95;G01N21/956;G01R31/308;H01J37/00;H01L21/00;H01L21/66;H01L21/68;(IPC1-7):G01N21/00 |
主分类号 |
G01N21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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