发明名称 Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process
摘要 A processing method for semiconductor devices in a semiconductor fabrication line includes processing a substrate in a first processing apparatus, transferring the substrate processed in the first processing apparatus to a detecting apparatus without removal of the substrate from the semiconductor fabrication line while continuing fabrication of the semiconductor devices, detecting foreign particle defects on the substrate transferred to the detecting apparatus, and determining a foreign particle generation condition of the processing apparatus based on a data from the detecting.
申请公布号 US2001021015(A1) 申请公布日期 2001.09.13
申请号 US20010805188 申请日期 2001.03.14
申请人 MORIOKA HIROSHI;NOGUCHI MINORI;OHSHIMA YOSHIMASA;KEMBO YUKIO;NISHIYAMA HIDETOSHI;MATSUOKA KAZUHIKO;SHIGYO YOSHIHARU 发明人 MORIOKA HIROSHI;NOGUCHI MINORI;OHSHIMA YOSHIMASA;KEMBO YUKIO;NISHIYAMA HIDETOSHI;MATSUOKA KAZUHIKO;SHIGYO YOSHIHARU
分类号 G01N21/00;G01N21/94;G01N21/95;G01N21/956;G01R31/308;H01J37/00;H01L21/00;H01L21/66;H01L21/68;(IPC1-7):G01N21/00 主分类号 G01N21/00
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