Phase mask

摘要

The phase mask is provided for illuminating a photo-sensitive layer in a photolithography process for producing integrated circuits with a predetermined pattern of optically transmissive regions. The phase mask is configured, in zones in which the distances between neighboring regions in at least one geometrical direction are less than a predetermined limiting distance, in each case as an alternating phase mask. The zones with isolated contact windows are in each case configured as a halftone phase mask or a chromeless phase mask.