| 摘要 |
<p>Compositions useful for chemical vapor delivery (CVD) formation of copper layers in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head or for circuitization of packaging components. The copper precursor formulation may include one or more copper precursors, e.g., a precursor of the formula hfac(Cu)L where L is a low-cost ligand such as an alkene and/or alkyne. The formulation may include in addition to the copper precursor(s) one or more low-cost ligand species such as alkenes, alkynes, dienes and combinations thereof, to increase thermal stability of the formulation and provide enhanced vaporization properties for CVD.</p> |
