发明名称 |
Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device |
摘要 |
A method of manufacturing a semiconductor device, which comprises a step of forming an oxide film by oxidizing a surface of semiconductor layer in an atmosphere containing an oxygen-activated species at a temperature of over 550° C. A method of manufacturing a semiconductor device, which comprises the steps of forming an oxide film by oxidizing a surface of semiconductor in an atmosphere containing an oxygen-activated species, and removing the oxide film so as to expose a surface of the semiconductor. A method of manufacturing a semiconductor device which comprises a step of feeding an oxidizing source gas comprising as a main component oxygen atomic radicals of singlet state in an excited state to a silicon layer thereby to oxidize a surface of the silicon layer, thus forming a silicon oxide film.
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申请公布号 |
US6287988(B1) |
申请公布日期 |
2001.09.11 |
申请号 |
US19980039980 |
申请日期 |
1998.03.17 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAGAMINE MAKOTO;ITOH HITOSHI |
分类号 |
H01L21/28;H01L21/306;H01L21/3065;H01L21/316;H01L21/762;H01L21/763;H01L29/51;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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