| 摘要 |
A level shifting circuit comprises a first insulated-gate transistor which has its gate provided with an input signal and a second insulated-gate transistor which has its drain connected with the source of the first insulated-gate transistor. The second insulated-gate transistor may have the same conductivity type as the first insulated-gate transistor. A voltage not affected by factors such as the manufacturing process used to make the device, operating temperature, or supply voltage is applied to the gate of the second insulated-gate transistor. A ratio of gate channel width to gate channel length for these two insulated-gate transistors are set to a same value, thereby allowing the level-shifting circuit to output a constant predetermined value; and which is not affected by the aforementioned manufacturing process, operating temperature, and supply voltage factors.
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