发明名称 |
Method for simultaneous dopant driving and dielectric densification in making a semiconductor structure |
摘要 |
The present invention relates to a well-drive process in which the process of well driving is carried out simultaneously with a densification cycle. The inventive method is particularly applicable to isolation trenches having widths at or below about 0.2 microns. The inventive method may be applied to other semiconductive structures of varying geometries.
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申请公布号 |
US6287937(B1) |
申请公布日期 |
2001.09.11 |
申请号 |
US20000619777 |
申请日期 |
2000.07.20 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LEE ROGER;GONZALEZ FERNANDO |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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主权项 |
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地址 |
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