发明名称 |
Apparatus for processing both sides of a microelectronic device precursor |
摘要 |
The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate.The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.
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申请公布号 |
US6287413(B1) |
申请公布日期 |
2001.09.11 |
申请号 |
US19990464780 |
申请日期 |
1999.12.17 |
申请人 |
FSI INTERNATIONAL, INC. |
发明人 |
FAYFIELD ROBERT T.;SCHWAB BRENT |
分类号 |
C23C16/48;H01L21/00;H01L21/306;(IPC1-7):C23F1/02;C23C16/00 |
主分类号 |
C23C16/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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