发明名称 Apparatus for processing both sides of a microelectronic device precursor
摘要 The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate.The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.
申请公布号 US6287413(B1) 申请公布日期 2001.09.11
申请号 US19990464780 申请日期 1999.12.17
申请人 FSI INTERNATIONAL, INC. 发明人 FAYFIELD ROBERT T.;SCHWAB BRENT
分类号 C23C16/48;H01L21/00;H01L21/306;(IPC1-7):C23F1/02;C23C16/00 主分类号 C23C16/48
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