发明名称 Bias circuit for read amplifier circuits for memories
摘要 A bias circuit for read amplifier circuits for memories includes at least one first circuit branch formed by a first pair of MOS transistors connected between a supply voltage and ground. The first pair of MOS transistors includes a P-channel diode connected transistor and an N-channel transistor connected in series, with an enable transistor interposed therebetween. The first circuit branch drives a capacitive load for coupling to the supply voltage. The bias circuit further includes reference current amplifier circuit branches for amplifying a reference current which flows in the first circuit branch for charging the capacitive load. A circuit portion, which controls the charging current of the capacitive load, includes a feedback loop between the reference current amplifier circuit branches and the capacitive load.
申请公布号 US6288960(B1) 申请公布日期 2001.09.11
申请号 US20000686326 申请日期 2000.10.11
申请人 STMICROELECTRONICS S.R.L. 发明人 CONTE ANTONINO;GAIBOTTI MAURIZIO;ZERILLI TOMMASO
分类号 G11C7/06;G11C7/14;(IPC1-7):G11C7/00 主分类号 G11C7/06
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