发明名称 |
Reference voltage generating circuit, semiconductor memory device and burn-in method therefor |
摘要 |
A reference voltage generating circuit having a fuse for controlling resistance includes a burn-in circuit for supplying burn-in voltage between opposite terminals of the fuse when a control signal is inputted to the burn-in circuit.
|
申请公布号 |
US6288965(B1) |
申请公布日期 |
2001.09.11 |
申请号 |
US20000592787 |
申请日期 |
2000.06.13 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HARA MOTOKO;SAWADA SEIJI |
分类号 |
H01L21/66;G11C5/14;G11C17/16;G11C29/06;G11C29/12;(IPC1-7):G11C7/00 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|