发明名称 Reference voltage generating circuit, semiconductor memory device and burn-in method therefor
摘要 A reference voltage generating circuit having a fuse for controlling resistance includes a burn-in circuit for supplying burn-in voltage between opposite terminals of the fuse when a control signal is inputted to the burn-in circuit.
申请公布号 US6288965(B1) 申请公布日期 2001.09.11
申请号 US20000592787 申请日期 2000.06.13
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 HARA MOTOKO;SAWADA SEIJI
分类号 H01L21/66;G11C5/14;G11C17/16;G11C29/06;G11C29/12;(IPC1-7):G11C7/00 主分类号 H01L21/66
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