| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a ceramic substrate having excellent heating and cooling characteristics and electric strength at high temperature, generating little warpage and suitable as a substrate for the production and inspection of semiconductor. SOLUTION: The objective ceramic substrate has an electrically conductive material on the surface of the substrate or in the substrate. The ceramic substrate contains 15×1011 pores having a pore diameter of >=0.5μm per 1 m2.</p> |
