发明名称 Diamond thin film or the like, method for forming and modifying the thin film, and method for processing the thin film
摘要 An improved gas phase synthesized diamond, CBN, BCN, or CN thin film having a modified region in which strain, defects, color and the like are reduced and/or eliminated. The thin film can be formed on a substrate or be a free-standing thin film from which the substrate has been removed. The thin film can be stably and reproducibly modified to have an oriented polycrystal structure or a single crystal structure. The thin film is modified by being subjected to and heated by microwave irradiation in a controlled atmosphere. The thin film has a modified region in which a line width of the diamond spectrum evaluated by Raman spectroscopy of 0.1 microns or greater is substantially constant along a film thickness direction of the thin film, and the line width of the modified region is 85% or less of a maximum line width of the residual portion of the film thickness.
申请公布号 US6287889(B1) 申请公布日期 2001.09.11
申请号 US20000490991 申请日期 2000.01.26
申请人 APPLIED DIAMOND, INC. 发明人 MIYAKE SHOJI;TAKEDA SHU-ICHI
分类号 C01B21/082;C23C14/06;C23C14/58;C23C16/26;C23C16/27;C23C16/34;C23C16/56;C30B29/04;C30B33/00;H01L21/205;(IPC1-7):H01L21/00 主分类号 C01B21/082
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