| 摘要 |
For forming a highly conductive junction in an active device area of a semiconductor substrate, a first dopant is implanted into the active device area to form a preamorphization region. A second dopant is then implanted into the preamorphization region to have a dopant profile along a depth of the preamorphization region, and the dopant profile has a dopant peak within the preamorphization region. A RTA (Rapid Thermal Anneal) is performed to recrystallize a portion of the preamorphization region from an interface between the preamorphization region and the semiconductor substrate to below the dopant peak. A LTP (Laser Thermal Process) is then performed to recrystallize a remaining portion of the preamorphization region that has not been recrystallized during the RTA (Rapid Thermal Anneal) to activate a substantial portion of the second dopant in the preamorphization region. In this manner, a relatively small portion of junction at the interface of the junction with the semiconductor substrate is recrystallized using a RTA (Rapid Thermal Anneal) process before the LTP (Laser Thermal Process). The interface of the junction with the semiconductor substrate that is recrystallized using a RTA (Rapid Thermal Anneal) has a minimized amount of crystallization defects such that the resistance of the junction is minimized. Such a highly conductive junction may be formed as a drain extension, a source extension, a drain contact junction, and a source contact junction of a field effect transistor for minimizing the series resistance at the drain and source of the field effect transistor and thus for enhancing the speed performance of the field effect transistor.
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