发明名称 |
Gate dielectric with self forming diffusion barrier |
摘要 |
A method for forming a semiconductor device comprising forming a dielectric layer on an area of a silicon substrate; implanting nitrogen atoms into said dielectric layer; forming a conductive layer of polysilicon over said dielectric layer; annealing the dielectric layer to drive the nitrogen atoms to form a gate dielectric of a dielectric layer having silicon nitride layer interfaces of the dielectric layer and the silicon substrate and the polysilicon layers; and, forming a gate structure in said polysilicon layer and source/drain regions in said silicon substrate, said source/drain regions aligned with said gate structure.
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申请公布号 |
US6287897(B1) |
申请公布日期 |
2001.09.11 |
申请号 |
US20000515109 |
申请日期 |
2000.02.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GOUSEV EVGENI;CHEN KAI;RAY ASIT KUMAR |
分类号 |
H01L29/78;H01L21/28;H01L21/8238;H01L27/092;H01L29/51;(IPC1-7):H01L21/335;H01L21/823 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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