Method for programming and reading 2-bit p-channel ETOX-cells with non-connecting HSG islands as floating gate

摘要

A method of reading a 2-bit p-channel memory cell having a p+ drain, a p+ source, a control gate, and a floating gate formed from non-connecting hemispherical silicon grain (HSG) islands. The p+ drain and the p+ source is formed in an n-well. The method comprises: applying a positive voltage to the control gate to generate a gate induced drain leakage (GIDL) current; and measuring a drain GIDL current at the drain and a source GIDL current at the source simultaneously to determine the 2-bit data stored in the memory cell.