Semiconductor device, method of manufacturing a semiconductor device, and method of forming a pattern for semiconductor device

摘要

A resist pattern is formed on stacked first and second conductive films. After second conductive film is patterned, the patterning of first conductive film follows without removing the remaining resist pattern. Resist pattern is completely removed by etching before the patterning of first conductive film is completed. Thereafter, etching is continued using second conductive film as a mask, and the patterning of first conductive film is completed. Thus, a method of forming a pattern for the semiconductor device in which minute interconnection pattern having a stacked structure is formed without an increase in the number of processing steps can be provided.