RESERVOIR AND INGRESS PATH FOR DEUTERIUM

摘要

PURPOSE: Provided is the substrate which dispose the ingress paths of deuterium in a semiconductor device. CONSTITUTION: The deuterium can be diffused to a semiconductor device region for the purpose of passivation. The on-board deuterium reservoir region is in a plug shape which is extended up to a semiconductor substrate through an insulation layer and a deuterium barrier layer. Preferably, the storage region is positioned in a state that the reservoir region comes into contact with a shallow trench oxide so that the deuterium can be diffused to a semiconductor device. As the ingress paths of deuterium, a path from the surface formed by passing a semiconductor surface thin film and a path from the rear through a trench isolation formed by passing the semiconductor substrate are available.