发明名称 METHOD FOR FORMING RESIST PATTERN
摘要 PURPOSE: To provide a method for forming resist patterns capable of reducing the diameter of contact holes. CONSTITUTION: The method for forming the resist patterns for forming a resist 2 on a substrate 1, forming a plurality of holes 3 for formation of the contact holes at prescribed intervals in the prescribed regions of the resist, than causing reflow to deform the holes 3 for forming the contact holes, thereby reducing the diameters of the holes, in which the circumferences of the holes 3 for forming the contact holes are provided with slit patterns 4 which act as the breakwater for the flow of the resist 2, control the deformation quantity of the holes 3 for forming the contact holes and are annihilated in a reflow stage.
申请公布号 KR20010086339(A) 申请公布日期 2001.09.10
申请号 KR20010002075 申请日期 2001.01.13
申请人 NEC CORPORATION 发明人 SAITO HIROFUMI
分类号 H01L21/027;G03F1/00;G03F1/08;G03F1/68;G03F7/039;G03F7/40;(IPC1-7):H01L21/027 主分类号 H01L21/027
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