| 摘要 |
PURPOSE: Provided are a coating solution for use in forming bismuth-based ferroelectric thin film that may include one or more of the advantages of permitting organic components to be decomposed at low enough temperature, forming a coat that permits rapid conversion to inorganic nature, and forming a coat that loses only small weight after decomposition of organic components, and a method of forming bismuth-based ferroelectric thin film using the coating solution. CONSTITUTION: The coating solution comprises a compound of formula: H3CO-(C2H4O)n-CH3, and an organometallic compound containing metallic elements of which a bismuth-based ferroelectric thin film is composed. In the formula, n represents an integer of 2-5. The method of forming bismuth-based ferroelectric thin film comprises the steps of (i) applying the coating solution onto a substrate, (ii) drying the applied coating solution, and (iii) performing a rapid heat treatment at a temperature rise rate of at least 10 deg.C/sec. to form a bismuth-based ferroelectric thin film.
|
