| 摘要 |
PURPOSE: A method for fabricating a semiconductor component is provided to adequately protect the ferroelectric or paraelectric capacitor material of the storage capacitor against the penetration of hydrogen. CONSTITUTION: The first oxide layer(4) is provided on a substrate(1), a capacitor having a metal oxide containing capacitor material layer(32) separated on a downside electrode and upside electrodes(31, 33) are formed thereon, and the first oxide layer(4) is doped prior to forming the capacitor, and a barrier substance forming a hydrogen diffusion barrier(7A) is doped in the first oxide layer under the use of a plasma doping method.
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