TRIMMING METHOD AND SYSTEM FOR WORDLINE BOOSTER TO MINIMIZE PROCESS VARIATION OF BOOSTED WORDLINE VOLTAGE

摘要

A method and system for controlling a boosted wordline voltage that is used during a read operation in a flash memory (10) is disclosed by the present invention. In the preferred embodiment, a gate voltage is generated by a voltage booster (48) in a wordline voltage booster circuit (20). An adjustable clamp circuit (12) is electrically connected with the wordline voltage booster circuit (20) for clamping the gate voltage that is generated by the voltage booster (48) at a predetermined voltage level. The predetermined voltage level may be adjusted with a trimming circuit (14) that is electrically connected to the adjustable clamp circuit (12), depending on process variations experienced during fabrication by the adjustable clamp circuit (12).