FORMATION METHOD FOR INTERLAYER INSULATING FILM OF SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method in which an insulating film having a superior gap characteristic is formed by using the intermediate product of gasified TEOS and of hydrogen peroxide and by using the active fluidity of a condensation reaction product. SOLUTION: The formation method comprises a first step in which a semiconductor substrate 210 and an active matrix composed of an interconnection 220 formed on the semiconductor substrate are mounted inside a reactor 310. The method comprises a second step in which a silicon source substance and the hydrogen peroxide (H2O2) are jetted in a gaseous state onto the active matrix. The method comprises a third step in which the interlayer insulating film 230 is formed on the active matrix by the condensation reaction of the silicon source substance with the hydrogen peroxide.