| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the semiconductor device which make it possible to obtain a good contact performance by minute contact. SOLUTION: An interlayer insulating film 15 is formed on a semiconductor substrate 11 on which a transistor is formed, and on the top of the interlayer, wiring 18 is formed. As for contact hole 16 for connecting the wiring 18 to a diffused layer 14, an aspect ratio is 3 or higher, and a polycrystalline silicon layer 17 is buried in this contact hole 16 flatly. The polycrystalline silicon layer 17 consists of a first deposition layer of the polycrystalline silicon, which adsorbs impurity, and a second deposition layer of polycrystalline silicon layer, which is heat treated to make impurity distribution uniform ahead of etching back by CDE.
|
