METHOD OF MANUFACTURING METAL OXIDE TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To manufacture an FET by using a metal oxide semiconductor. SOLUTION: A gate insulating film 32 of SiO2 is formed on an Si substrate 31. Zn(OAc)2.4H2O is suspended in isopropanol and the gate insulating film 32 is coated with this suspension. A channel layer 33 of ZnO is formed by thermal treatment and a source electrode 34 and a drain electrode 35 are formed thereon.