SEMICONDUCTOR INTEGRATED CIRCUIT APPARATUS AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: To lower the resistance of a gate electrode in a peripheral circuit of a semiconductor integrated circuit apparatus having a nonvolatile memory. CONSTITUTION: The gate electrode GA of MOSQA for a peripheral circuit is constituted by the same gate electrode structure as a nonvolatile memory cell of a two-layer gate electrode structure, and a contact hole SC connecting between conductive films 4 and 6 which constitute the gate electrode GA is arranged in a position where it flatly overlaps an active area LA in the plane of the gate electrode GA.