发明名称 METHOD FOR CORRECTING PROXIMITY EFFECT, RETICLE, AND METHOD OF MANUFACTURING DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method by which a stored energy profile formed on the surface of a sensitive substrate caused by proximity effect and out-of-focus of an optical system can be corrected. SOLUTION: In this method, a reticle pattern is set by expanding a designed pattern to a multiple of the inverse number of the reduced scale which is used at the time of transferring the designed pattern. The out-of-focusing of the projection optical system is set as the function of a deflecting amount and the position of the pattern in a one-shot exposed area and the energy profiles DR(x) and E(x) formed on the sensitive substrate, when exposure is made by using a primary reticle pattern are calculated. Then the threshold of developing energy is set, so that the edge position of each section of the pattern formed on a wafer correspondingly to the profile E(x) becomes close to a prescribed position. Thereafter, the line width of each section of the pattern at the threshold is calculated, and the primary reticle pattern is corrected so that the calculated line width coincides with the line width of the designed pattern. Successively, pattern data for writing a reticle pattern are prepared by performing shape correction and does correction. After writing the reticle pattern, a reticle is manufactured though development.</p>
申请公布号 JP2001244165(A) 申请公布日期 2001.09.07
申请号 JP20000049136 申请日期 2000.02.25
申请人 NIKON CORP 发明人 OKINO TERUAKI;KAMIJO KOICHI
分类号 G03F1/20;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/20
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