发明名称 MEASURING METHOD, MEASURING APPARATUS AND SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method and an apparatus for measuring semiconductor elements whose total thickness is not thicker than required and which does not include an unnecessary layer as a semiconductor element, and to provide the semiconductor element (substrate). SOLUTION: In a method of manufacturing a semiconductor element composing a multilayer structure, a thin film with uniform thickness which does not transmit measuring light is formed on a surface of a semiconductor element which is desired to be measured in the middle of manufacturing. In other words, in a method for measuring the surface shape of a substrate on which a mask patter is to be transferred, the film with uniform thickness is formed on the substrate surface to be measured, measuring light is applied on the surface of the film, and the measuring light reflected on the film surface is detected.
申请公布号 JP2001244310(A) 申请公布日期 2001.09.07
申请号 JP20000050418 申请日期 2000.02.28
申请人 NIKON CORP 发明人 KONDO NAOHITO;HAGIWARA TSUNEYUKI
分类号 G01B11/24;H01L21/027;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01B11/24
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