发明名称 TEMPERATURE-COMPENSATED BIAS GENERATOR
摘要 <p>The present invention discloses methods and systems for generating a bias voltage during an Automatic Program Disturb Erase Verify (APDEV) operation in a memory device. During the APDEV operation, a predetermined supply voltage is generated by a regulated power supply. The predetermined supply voltage is directed to a temperature-compensated bias generator circuit (14). The temperature-compensated bias generator circuit (14) is activated to generate the bias voltage based on the operating temperature of the memory device.</p>
申请公布号 WO2001065561(A1) 申请公布日期 2001.09.07
申请号 US2001004044 申请日期 2001.02.07
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