| 摘要 |
PURPOSE: To provide a semiconductor storage in which various burst operation is realized increasing operation speed, simplifying a redundant circuit is realized increasing operation speed. CONSTITUTION: A column system address decoder selecting a specific bit line out of plural bit lines of a memory array provided with plural word lines and plural bit lines is provided with first and second pre-decoders corresponding respectively to high-order and low-order addresses, a shift register making an output signal of the second pre-decoder as an initial value, an output circuit selecting an output signal of the second pre-decoder or an output signal of the shift register in accordance with an operation mode, the selecting signal is formed by an output signal of the first pre-decoder and an output signal passing the output circuit, a first shift register for even number address and a second shift register for odd number address are used as the shift register, and continuous selecting signals of two kinds of the bit line consisting of sequential operation and interleave operation are formed based on the initial value by combination of up and down shift operation.
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