发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an inexpensive semiconductor integrated circuit device capable of a fine wiring process and also having the same function as that of a conventional device, and its manufacturing method. SOLUTION: A first electrode pad 3 is provided on the circuit forming plane side of an IC chip 2 and a first insulating layer 4 is arrayed in the area except on the first electrode pad 3. A second insulating layer 7 composed of a material having photosensitivity, has an opening which exposes at least on part of the first electrode pad 3, a wiring 6, and at least one part of a second electrode pad 5, and is arrayed on the first insulating layer 4 is provided on the first insulating layer 4. The wiring 6 and the second electrode pad 5 are formed by filling an opening part of the second insulating layer 7 with conductive particles.
申请公布号 JP2001244366(A) 申请公布日期 2001.09.07
申请号 JP20000052405 申请日期 2000.02.28
申请人 SHARP CORP 发明人 NAKANISHI HIROYUKI;MORI KATSUNOBU;ISHIO TOSHIYA;SUMINOE SHINJI
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L23/12;H01L23/485 主分类号 H01L23/52
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